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| Switching Diodes MA4X174 Silicon planar type Unit : mm For small power rectification and surge absorption 0.65 0.15 2.8 - 0.3 1.5 - 0.05 + 0.25 + 0.2 0.65 0.15 0.95 0.2 Repetitive peak reverse voltage Non-repetitive peak forward surge current Output current*1 Repetitive peak forward current*1 Non-repetitive peak forward surge current*1,2 Junction temperature Storage temperature VRRM VRSM IO IFRM IFSM Tj Tstg 250 300 100 225 500 125 -55 to +125 V V mA mA mA C C 1.1 0.4 0.2 1 : Cathode 1 2 : Cathode 2 3 : Anode 2 4 : Anode 1 Mini Type Package (4-pin) Marking Symbol: M2Q Internal Connection 4 3 1 2 Note) *1 : Value in single diode used *2 : t = 1 s I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF VR = 200 V IF = 100 mA Conditions Min Typ Max 1.0 1.3 Unit A V Note) 1. Rated input/output frequency: 3 MHz 0 to 0.1 0.1 to 0.3 0.8 Reverse voltage (DC) VR 200 V 0.16 - 0.06 + 0.2 - 0.1 + 0.1 Parameter Symbol Rating Unit 0.6 - 0 I Absolute Maximum Ratings Ta = 25C + 0.1 3 0.4 - 0.05 * Two isolated elements contained in one package, allowing highdensity mounting * High voltage (VR: 200 V) rectification is possible 0.5 R 1.9 0.2 2.9 - 0.05 0.95 4 0.5 1 + 0.2 2 + 0.1 0.4 - 0.05 1.45 + 0.1 I Features 1 MA4X174 IF V F 1 000 100 Switching Diodes IR V R Ta = 125C 1.6 1.4 VF Ta 100 10 Forward current IF (mA) Forward voltage VF (V) Reverse current IR (nA) 1.2 1.0 0.8 0.6 0.4 0.2 IF = 100 mA 10 mA 3 mA 10 1 75C 1 Ta = 125C 75C 25C 0.1 - 20C 0.1 25C 0.01 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 0 40 80 120 160 200 240 0 -40 0 40 80 120 160 200 Forward voltage VF (V) Reverse voltage VR (V) Ambient temperature Ta (C) IR Ta 100 VR = 200 V 100 V 10 V 2.4 Ct VR 1 000 f = 1 MHz Ta = 25C 300 IF(surge) tW Ta = 25C IF(surge) tW 10 Terminal capacitance Ct (pF) 2.0 Forward surge current IF(surge) (A) Reverse current IR (nA) 100 30 10 3 1 0.3 0.1 0.03 Non repetitive 1.6 1 1.2 0.1 0.8 0.01 0.4 0.001 -40 0 40 80 120 160 200 0 0 40 80 120 160 200 240 0.1 0.3 1 3 10 30 Ambient temperature Ta (C) Reverse voltage VR (V) Pulse width tW (ms) 2 |
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